Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: TVSdiodeDescription: 600W Zener surface mounted transient voltage suppressor, P6SMB series (bidirectional) # # # transient voltage suppressor, On Semiconductor2369 -
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Category: TVSdiodeDescription: 600W Zener surface mounted transient voltage suppressor, P6SMB series (bidirectional) # # # transient voltage suppressor, On Semiconductor7308 -
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Category: TVSdiodeDescription: TVS Diode axial unidirectional 600W Surge, P6KE series, ON Semiconductor # # # transient voltage suppressor, On Semiconductor3364 -
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Category: TVSdiodeDescription: 600W Surmetic™-40 Zener Transient Voltage Suppressor (Unidirectional) # # # Transient Voltage Suppressor, On Semiconductor9154 -
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Category: TVSdiodeDescription: 600W Surmetic™-40 Zener Transient Voltage Suppressor (Unidirectional) # # # Transient Voltage Suppressor, On Semiconductor3619 -
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Category: TVSdiodeDescription: TVS Diode axial unidirectional 600W Surge, P6KE series, ON Semiconductor # # # transient voltage suppressor, On Semiconductor5167 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor7432 -
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Category: TVSdiodeDescription: 1500W 齐纳瞬态电压抑制器（单向） SMC 系列设计用于保护电压敏感组件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率 − 1500W @ 1.0ms 3 类 ESD 等级> (16kV)/人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于10V UL 497B，用于隔离回路保护 指定了最大温度系数 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor9918 -
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Category: TVSdiodeDescription: The 1500W Zener Transient Voltage Suppressor (Unidirectional) SMC series is designed to protect voltage sensitive components from high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power -1500W @ 1.0ms, Class 3 ESD level>(16kV)/highest clamp voltage of human body model @ peak pulse current, low leakage<5 μ A, higher than 10V UL 497B, used for isolation circuit protection. The specified maximum temperature coefficient response time is usually<1ns # # # transient voltage suppressor, On Semiconductor7439 -
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Category: TVSdiodeDescription: The 1500W Zener Transient Voltage Suppressor (Unidirectional) SMC series is designed to protect voltage sensitive components from high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power -1500W @ 1.0ms, Class 3 ESD level>(16kV)/highest clamp voltage of human body model @ peak pulse current, low leakage<5 μ A, higher than 10V UL 497B, used for isolation circuit protection. The specified maximum temperature coefficient response time is usually<1ns # # # transient voltage suppressor, On Semiconductor3052 -
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Category: TVSdiodeDescription: The 1500W Zener Transient Voltage Suppressor (Unidirectional) SMC series is designed to protect voltage sensitive components from high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power -1500W @ 1.0ms, Class 3 ESD level>(16kV)/highest clamp voltage of human body model @ peak pulse current, low leakage<5 μ A, higher than 10V UL 497B, used for isolation circuit protection. The specified maximum temperature coefficient response time is usually<1ns # # # transient voltage suppressor, On Semiconductor6886 -
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Category: TVSdiodeDescription: TVS 二极管 Littelfuse 1SMA70AT3G 单向, 400W, 113V, 2针 DO-214AC (SMA)封装4860 -
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Category: TVSdiodeDescription: 400W 齐纳瞬态电压抑制器（单向） 齐纳瞬态电压抑制器的 ON Semiconductor SMA 系列设计用于保护电压敏感元件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力，具有 400W 高浪涌能力、低齐纳阻抗和快速响应时间。 SMA 系列设计用于保护电压敏感组件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器，On Semiconductor7181 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor7427 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor3828 -
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Category: TVSdiodeDescription: 1500W 齐纳瞬态电压抑制器（单向） SMC 系列设计用于保护电压敏感组件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率 − 1500W @ 1.0ms 3 类 ESD 等级> (16kV)/人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于10V UL 497B，用于隔离回路保护 指定了最大温度系数 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor3676 -
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Category: TVSdiodeDescription: 1500W 齐纳瞬态电压抑制器（单向） SMC 系列设计用于保护电压敏感组件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率 − 1500W @ 1.0ms 3 类 ESD 等级> (16kV)/人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于10V UL 497B，用于隔离回路保护 指定了最大温度系数 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor2775 -
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Category: TVSdiodeDescription: 硅雪崩二极管 - 轴向引线电信瞬态电压抑制器 Silicon Avalanche Diodes - Axial Leaded Telecommunications Transient Voltage Suppressors3105 -
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Category: TVSdiodeDescription: 硅雪崩二极管 - 600W表面贴装瞬态电压抑制器 Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors5450 -
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Category: TVSdiodeDescription: Silicon Avalanche Diode -600W Surface Mount Transient Voltage Suppressors9973 -
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Category: TVSdiodeDescription: TVS diode axial unidirectional 600W Surge, P6KE series, ON Semiconductor # # # transient voltage suppressor, On Semiconductor9649 -
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Category: TVSdiodeDescription: TVS diode axial unidirectional 600W Surge, P6KE series, ON Semiconductor # # # transient voltage suppressor, On Semiconductor1184 -
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Category: TVSdiodeDescription: Silicon Avalanche Diode -600W Surface Mount Transient Voltage Suppressors2919
